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IRF530A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T C =25 C unless otherwise specified)
Ο
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BV DSS
Drain-Source Breakdown Voltage
100
--
--
V
V GS =0V,I D =250 μ A
V/ C I D =250 μ A
? BV/ ? T J
Breakdown Voltage Temp. Coeff.
--
0.11
--
Ο
See Fig 7
V DS =80V,T C =150 C
V GS(th)
I GSS
I DSS
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
2.0
--
--
--
--
--
--
--
--
--
4.0
100
-100
10
100
V
nA
μ A
V DS =5V,I D =250 μ A
V GS =20V
V GS =-20V
V DS =100V
Ο
R DS(on)
g fs
Static Drain-Source
On-State Resistance
Forward Transconductance
--
--
--
10.25
0.11
--
?
?
V GS =10V,I D =7A
V DS =40V,I D =7A
O 4
O 4
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
--
--
--
610
150
62
790
175
72
pF
V GS =0V,V DS =25V,f =1MHz
See Fig 5
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
--
--
--
--
--
--
--
13
14
55
36
27
4.5
12.8
40
40
110
80
36
--
--
ns
nC
V DD =50V,I D =14A,
R G =12 ?
See Fig 13
V DS =80V,V GS =10V,
I D =14A
See Fig 6 & Fig 12
O 4 O 5
O 4 O 5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
T J =25 C ,I S =14A,V GS =0V
T J =25 C ,I F =14A
I S
I SM
V SD
t rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
O 1
O 4
--
--
--
--
--
--
--
109
14
56
1.5
--
A
V
ns
Integral reverse pn-diode
in the MOSFET
Ο
Ο
Q rr
Reverse Recovery Charge
--
0.41
--
￥ì C
di F /dt=100A/ μ s
O 4
O
O 2 L=2mH, I AS =14A, V DD =25V, R G =27 ? , Starting T J =25 o C o
Notes ;
1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O 3 I SD <_ 14 A, di/dt <_ 35 0A/ μ s, V DD <_ BV DSS , Starting T J =25 C
O 4 Pulse Test : Pulse Width = 250 μ s, Duty Cycle <_ 2%
O 5 Essentially Independent of Operating Temperature
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